Basics of Power Conversion: Power Semiconductors

Power conversion relies on fast-switching MOSFETs and IGBTs that use low-voltage gate-drive signals to control high-voltage, high-current switching efficiently.

Basics of Power Conversion: Power Semiconductors

There are a multitude of circumstances that make power conversion a necessity. Power conversion, of course, is the converting of electric power from one form to another, from one voltage to another, or one frequency to another; it also encompasses any/all combinations of these.

Power conversion can take various forms:

  • AC-AC: AC line voltage conversion to another voltage and/or frequency
  • AC-DC or DC-AC: AC line voltage conversion to a specified DC voltage or vice versa
  • DC-DC: DC voltage conversion to a different specified DC voltage

At the heart of any power-conversion scheme are fast-switching power semiconductor devices to enable the conversion in the most efficient manner. These devices typically operate at switching frequencies from 1 to 100 kHz. Note that power conversion does not encompass typical 50/60-Hz core/coil devices such as conventional utility step-up or distribution transformers.

Figure 1: The basic building blocks of power conversion circuits are the power MOSFET and the IGBT; shown are (left) an N-channel enhancement-mode MOSFET and (right) a P-channel (minority carrier) IGBT

The mainstay building blocks of power conversion are the power MOSFET and the IGBT (Figure 1). These devices both operate in essentially the same way: a gate drive controls switching of current that flows between the drain and source (in the power MOSFET) or the collector and emitter (in the IGBT).

In the context of a power-conversion system, the power semiconductor can be thought of as a very fast switch that can withstand a rated blocking voltage, typically in the hundreds of volts or even more than 1 kV. They can conduct a large amount of current with very low resistance (low forward-voltage drop). Switching rates are in the kilohertz range (Figure 2).

Figure 2: Power semiconductors are very fast-switching devices with high blocking voltages and low forward-voltage drops

As mentioned earlier, switching in the power-semiconductor device is controlled through the gate-drive signal. A pulse-width-modulated (PWM) signal is applied to the device's gate lead to control the switching. This signal, which is typically from 3 to 24 V in amplitude, activates the device's switching at the rate governed by the gate-drive signal (Figure 3). Thus, a low-voltage signal on the gate drive controls switching of very high voltages on the output side of the device.

Figure 3: The gate-drive signal controls the switching activity of the power semiconductor

Because the gate-drive signal is floating at the full (or half, depending on topology) DC bus voltage, there are some probing concerns. For very low-voltage drives of ~50 V or less, passive probes might be feasible. For higher voltages, use a high-voltage differential probe with isolation of 1000 VRMS from channel to channel and from channel to ground. Connecting a passive probe to a 600-V inverter circuit to look at the gate-drive signal will not turn out well for your oscilloscope.

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Ken Johnson presented a webinar series titled Essential Principles of Power. Part 2 of that series Power Conversion Fundamentals - From Semiconductor Devices to Complex Drives covers more details on this topic. Click the button below to watch the webinar, or download the transcript to preview the webinar content.

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