On-Die Power Rail Measurements: Setup and Best Practices
Accurate on-die power rail measurements depend on proper sense-line design, differential probing, and careful test setup at the package level.
Power conversion relies on fast-switching MOSFETs and IGBTs that use low-voltage gate-drive signals to control high-voltage, high-current switching efficiently.
There are a multitude of circumstances that make power conversion a necessity. Power conversion, of course, is the converting of electric power from one form to another, from one voltage to another, or one frequency to another; it also encompasses any/all combinations of these.
Power conversion can take various forms:
At the heart of any power-conversion scheme are fast-switching power semiconductor devices to enable the conversion in the most efficient manner. These devices typically operate at switching frequencies from 1 to 100 kHz. Note that power conversion does not encompass typical 50/60-Hz core/coil devices such as conventional utility step-up or distribution transformers.

The mainstay building blocks of power conversion are the power MOSFET and the IGBT (Figure 1). These devices both operate in essentially the same way: a gate drive controls switching of current that flows between the drain and source (in the power MOSFET) or the collector and emitter (in the IGBT).
In the context of a power-conversion system, the power semiconductor can be thought of as a very fast switch that can withstand a rated blocking voltage, typically in the hundreds of volts or even more than 1 kV. They can conduct a large amount of current with very low resistance (low forward-voltage drop). Switching rates are in the kilohertz range (Figure 2).

As mentioned earlier, switching in the power-semiconductor device is controlled through the gate-drive signal. A pulse-width-modulated (PWM) signal is applied to the device's gate lead to control the switching. This signal, which is typically from 3 to 24 V in amplitude, activates the device's switching at the rate governed by the gate-drive signal (Figure 3). Thus, a low-voltage signal on the gate drive controls switching of very high voltages on the output side of the device.

Because the gate-drive signal is floating at the full (or half, depending on topology) DC bus voltage, there are some probing concerns. For very low-voltage drives of ~50 V or less, passive probes might be feasible. For higher voltages, use a high-voltage differential probe with isolation of 1000 VRMS from channel to channel and from channel to ground. Connecting a passive probe to a 600-V inverter circuit to look at the gate-drive signal will not turn out well for your oscilloscope.
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