Transmission line losses—driven by skin effect and dielectric properties—play a critical role in degrading high-speed signal integrity and eye performance.
Transmission line loss directly affects eye diagram quality, with around −12 dB at Nyquist marking the limit before signal integrity rapidly degrades without equalization.
Silicon and Wide-bandgap (GaN and SiC) power semiconductor devices and measurements, including double-pulse testing, switching loss, conduction loss, Rds ON, and a variety of other measurements to determine efficiency and efficacy of power semiconductor devices in circuit.
Power conversion relies on fast-switching MOSFETs and IGBTs that use low-voltage gate-drive signals to control high-voltage, high-current switching efficiently.
